Affiliation:
1. Nagoya Institute of Technology
Abstract
While the Heusler-type Fe2VAl compound exhibits a semiconductor-like behavior in electrical resistivity, doping of quaternary elements causes a sharp decrease in the low-temperature resistivity ρ and a large enhancement in the Seebeck coefficient S. Substantial enhancement in S can be explained on the basis of the electronic structure where the Fermi level shifts slightly from the center of a pseudogap either up- or downward depending on doping. In particular, a slight substitution of Si for Al leads to a large power factor (P = S2/ρ) of 5.5×10-3W/m K2at around room temperature.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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