Magnetoresistance and Current-Controlled Electric Transport Properties of Fe-C Film on Si Substrate

Abstract

Using pulsed laser deposition we prepared Fex-C1-x films on Si (100) substrates. We show that the lightly Fe-doped amorphous carbon films on Si substrate have large MR at room temperature. At T=300K and B=5T a large positive MR of 138% was found in Fe0.011-C0.989 film. Furthermore, we find that when temperature T<258K, the MR of Fe0.011-C0.989 film on Si substrate is negative and when 258K<T<340K the MR is positive. Besides, the resistance of the material is controlled by the measuring current and therefore its I-V curve is unusual asymmetric. The current-controlled electric transport properties have a potential to achieve higher density magnetic random access memory (MRAM).