Electrical Characterization of Deposited and Oxidized Ta<sub>2</sub>Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures-Reference-Cited by-同舟云学术

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Electrical Characterization of Deposited and Oxidized Ta₂Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures

Published:2004-06 Issue: Volume:457-460 Page:845-848
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Pérez-Tomás Amador¹,Tournier Dominique²,Montserrat Josep³,Mestres Narcis⁴,Sandiumenge F.,Millan José³

Affiliation:

1. Campus Universidad Autonóma de Barcelona

2. Université de Lyon

3. IMB-CNM, CSIC

4. Imperial College London

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.845.pdf

Reference5 articles.

1. K.C. Saraswat, R.S. Nowicki and J.F. Moudler: Appl. Phys. Lett. Vol. 41 (1982), p.1127.

2. E. Atanassova, D. Spassov, A. Paskaleva, J. Koprinarova and M. Georgieva: Microelectronics Journal. Vol. 33 (2002), p.907.

3. G.B. Alers, D.J. Werder, Y. Chabal, H.C. Lu, E.P. Gusev, E. Garfunkel, T. Gustafsson, and R.S. Urdahl: Appl. Phys. Lett. Vol. 73 (1998), p.1517.

4. Y-S. Lai, K-J. Chen and J.S. Chen: J. Appl. Phys. Vol. 91 (2002), p.6430.

5. L.A. Lipkin, and J.W. Palmour: IEEE Trans. Electron Devices Vol. 46 (1999), p.525.

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2. Evaluation of Interface States in Gas Sensor with Pt–SiO2–SiC Structure under High-Temperature Conditions by AC Conductance Method;Japanese Journal of Applied Physics;2005-12-08

3. 4H-SiC MOSFETs Using Thermal Oxidized Ta₂Si Films as High-k Gate Dielectric;Materials Science Forum;2005-05

4. Characterization of High-k Ta[sub 2]Si Oxidized Films on 4H-SiC and Si Substrates as Gate Insulator;Journal of The Electrochemical Society;2005

5. 4H-SiC MIS structures using oxidized Ta2Si as high-k dielectric;MRS Proceedings;2004

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