Microstructure and Chemical Properties of c-BN Films Prepared by ME-ARE

Abstract

c-BN film was synthesized using ME-ARE on Si substrate. The deposition process was optimized via the Taguchi method. The optimized conditions were as follows: substrate temperature, anode (plasma) current, Ar/N2 ratio, pulse frequency, duty frequency, bias voltage and deposition time were 500°C, 15A, 3, 1 kHz, 50%, -130V and 15 min, respectively. The crosssectional TEM observation revealed that the c-BN films with a thickness of 100nm ~300nm were composed of two layers, a columnar h-BN layer with a thickness of 30nm~40 nm normal to Si substrate and a c-BN structure.