Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping-Reference-Cited by-同舟云学术

Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

Published:2005-01 Issue: Volume:475-479 Page:1663-1668
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Zhang Rui-ying¹,Wang Wei²,Zhou Fan,Bian Jing³,Zhao Ling-juan,Zhu Hong Liang²,Jian Shui Sheng⁴

Affiliation:

1. Chinese Academy of Sciences

2. Chines Academy of Sciences

3. Zhejiang Sci-Tech University

4. Beijing Jiaotong University

Abstract

1.5µm n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm2 for 1000 µm long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm2/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5µm devices have been demonstrated.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.475-479.1663.pdf

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