Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC-Reference-Cited by-同舟云学术

Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC

Published:2004-06 Issue: Volume:457-460 Page:1337-1340
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Chen L.¹,Guy Owen J.¹,Pope G.¹,Teng K.S.¹,Maffeis T.¹,Wilks S.P.¹,Mawby Philip A.²,Jenkins T.E.³,Brieva A.³,Hayton D.J.³

Affiliation:

1. University of Wales Swansea

2. University of Warwick

3. University of Wales Aberystwyth

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.1337.pdf

Reference10 articles.

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2. R. Schörner, P. Friedrichs, D. Perters, and D. Stephani, IEEE Electron Device Lett. (USA) vol. 20 (1999), p.241.

3. N. S. Saks, S. S. Mani, and A. K. Agarwal, Mater. Sci. Forum (Switzerland) vol. 353-356 (2001), p.1113; Appl. Phys. Lett. (USA) vol. 76 (2000), p.2250.

5. T. E. Jenkins, J. Phys D; Appl. Phys vol 32 (1999), p R45.

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