Affiliation:
1. University of South Florida
2. University of Pittsburgh
Abstract
A brief historical development of porous SiC and GaN is given. SEM images of nine
porous morphologies in 4H, 6H and 3C SiC are shown along with anodization details. Similarly, two porous GaN morphologies are presented. Applications and future prospects are discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
22 articles.
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