Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes-Reference-Cited by-同舟云学术

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Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes

Published:2003-09 Issue: Volume:433-436 Page:391-394
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Velmre Enn¹,Udal Andres¹

Affiliation:

1. Tallinn University of Technology

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.391.pdf

Reference20 articles.

1. V. Bikbajevas, V. Grivickas, M. Stölzer et al.: in the present issue.

2. L.E. Gurevich: Zh. Eksp. Teor. Fiz. Vol. 16 (1946), p.193 (in Russian).

3. L.E. Gurevich: Zh. Eksp. Teor. Fiz. Vol. 16 (1946), p.416 (in Russian).

4. H.P.R. Frederikse: Phys. Rev. Vol. 91 (1953), p.491.

5. H.P.R. Frederikse: Phys. Rev. Vol. 92 (1953), p.248.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs;IEEE Transactions on Electron Devices;2007-07

2. High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures;Materials Science Forum;2004-06

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