Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution-Reference-Cited by-同舟云学术

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Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution

Published:2003-09 Issue: Volume:433-436 Page:107-110
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Agueev Oleg A.¹,Svetlichnyi Alexander M.¹,Klovo A.G.¹,Kocherov A.N.¹,Izotovs D.A.¹

Affiliation:

1. Taganrog State University of Radio Engineering

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.107.pdf

Reference10 articles.

1. St.G. Muller, R.C. Glass, H.M. Hobgood, et all: Materials Sci. and Eng. B80 (2001), p.327.

2. D. � . Sechenov, F.D. Kasimov, F.G. Agaev, A.M. Svetlichny, O.A. Agueev: Activation processes of microelectronics (ELM, Baku 2000).

3. A.M. Svetlichny, D. � . Sechenov et all: Elektronnaja promishlennoct � 3 (1991), p.6 (in Russian).

4. Ju. P. Sinkov: Electronika SVCh Vol. 3 (363) (1984), p.36 (in Russian).

5. O.A. Agueev, A.M. Svetlichny, A.N. Kocherov: Izvestija vyzov. Elektronika � 1 (2001), p.23 (in Russian).

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