Specificity of Electron Impact Ionization in Superstructure Silicon Carbide-Reference-Cited by-同舟云学术

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Specificity of Electron Impact Ionization in Superstructure Silicon Carbide

Published:2004-06 Issue: Volume:457-460 Page:661-664
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sankin Vladimir Ilich¹,Shkrebiy Pavel P.¹,Savkina N.S.¹,Lepneva Alla A.¹

Affiliation:

1. Russian Academy of Sciences

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.661.pdf

Reference11 articles.

1. С. van Opdorp, J. Vrakking: J. Appl. Phys., 40, (1969), p.2320.

2. V.I. Sankin, Yu.A. Vodakov, D.P. Litvin: Sov. Phys. Semicond. 18, (1984), p.2146.

3. Yu. A. Vodakov, D. P. Litvin, V. I. Sankin, et al.: Sov. Phys. Semicond. 19, (1985), p.502.

4. P.J. Price: IBM J. Res. Dev., 17, (1973). p.39.

5. D.L. Andersen , E.J. Aas: J. Appl. Phys., 44, 8, (1973) p.3721.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC;Materials Science Forum;2006-10

2. Heterojunctions and superlattices based on silicon carbide;Semiconductor Science and Technology;2006-04-07

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