Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers-Reference-Cited by-同舟云学术

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Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers

Published:2003-09 Issue: Volume:433-436 Page:241-246
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Murata K.¹,Fujioka Naoki,Chinone Y.²,Nishino Shigehiro³

Affiliation:

1. Mitsui Engineering and Shipbuilding Co., Ltd.

2. Mitsui Engineering & Shipbuilding Co. Ltd.

3. Dong-Eui University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.241.pdf

Reference3 articles.

1. St.G. Muller, M.F. Brady, W.H. Brixius, G. Fechko, R.G. Glass, D. Henshall, H. McD. Hobgood, J.R. Jenny, R. Leonard, D. Malta, A. Powell, V.F. Rtsvetkov, S. Allen, J. Palmour, and C.H. Carter, Jr. Materials Science Forum. vol. 389-393 (2002).

2. N. Ohtani, T. Fujimoto, M. Katsuno, T. Aigo and H. Yashiro, Materials Science Forum. vol. 389-393 (2002) pp.29-34.

3. Y. Chinone, S. Ezaki, F. Fujita, and K. Matsumoto, Amorphous and Crystalline Silicon Carbide and Related Materials 2, Springer Proceedings in Physics, vol. 43, (1989), pp.198-206.

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