Acquiring MIS Structures Based on Bа0.8Sr0.2TiО3 Ferroelectric Films and their Properties-Reference-Cited by-同舟云学术

Acquiring MIS Structures Based on Bа_0.8Sr_0.2TiО₃Ferroelectric Films and their Properties

Published:2018-09 Issue: Volume:781 Page:20-24
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Afanasyev Mikhail¹,Nabiev Asaf²^ORCID,Chucheva Galina¹,Guseinov Dzhahangir²

Affiliation:

1. Fryazino Institute of Radioengineering and Electronics

2. Azerbaijan State Pedagogical University

Abstract

The paper considers formation of Ba0.8Sr0.2TiO3 ferroelectric films of MIS structures on silicon wafer with magnetron sputtering in HF discharge of the initial target material from the polycrystal ferroelectric in the oxygen atmosphere. Dielectric and volt-farad characteristics of MIS structures have been explored, depending on formation modes of Ba0.8Sr0.2TiO3 ferroelectric films. The authors determined technological modes of film deposition for acquiring MIS structures with the best electrophysical properties.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.781.20.pdf

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