Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process
Author:
Affiliation:
1. KTH, Royal Institute of Technology
2. KTH Royal Institute of Technology
3. Chonbuk National University
4. North Carolina State University
5. Carnegie Mellon University
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.338-342.1049.pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors;Solid-State Electronics;2003-04
2. Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications;Journal of Applied Physics;2002-07
3. Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide;Journal of Electronic Materials;2002-05
4. Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H–SiC;Journal of Applied Physics;2002-02-15
5. Inductively coupled plasma etch damage in 4H−SiC investigated by Schottky diode characterization;Journal of Electronic Materials;2001-03
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