High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing-Reference-Cited by-同舟云学术

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High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing

Published:2000-05 Issue: Volume:338-342 Page:877-880
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Panknin D.¹,Wirth H.¹,Anwand W.¹,Brauer Gerhard¹,Skorupa Wolfgang²

Affiliation:

1. Forschungszentrum Rossendorf

2. Helmholtz-Center Dresden-Rossendorf

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.877.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconductor Applications;Flash Lamp Annealing;2019

2. Characterization of ion-implanted 4H-SiC Schottky barrier diodes;Chinese Physics B;2010-01

3. Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers;Materials Science Forum;2004-06

4. Electrical properties of high-dose nitrogen-implanted and rapid thermal annealed 6H–SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05

5. Depth carrier profiling in silicon carbide;Current Opinion in Solid State and Materials Science;2002-02

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