Dislocation Generation in Device Fabrication Process-Reference-Cited by-同舟云学术

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Dislocation Generation in Device Fabrication Process

Published:2003-09 Issue: Volume:95-96 Page:439-446
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Mica Isabella¹,Polignano Maria Luisa²,Carnevale G.P.³,Armigliato Aldo⁴,Balboni R.⁴,Brambilla M.,Cazzaniga F.¹,Pavia Giuseppe⁵,Soncini V.

Affiliation:

1. ST-Microelectronics

2. ST Microelectronics

3. SGS-Thomson Microelectronics s.r.l.

4. CNR-IMM Sezione di Bologna

5. Carl Zeiss NTS GmbH

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.95-96.439.pdf

Reference13 articles.

1. CT. Wang, H. Haddad, P. Berndt et al.: IEEE/IRPS (1992), p.85.

2. H. Belgal, G. Yuen, J. Grohs et al.: IEEE/IRPS (1994), p.399.

3. F. Barson: IEEE/J. of Solid State Circuits Vol. SC-11 (1976), p.505.

4. M.H. Park, S.H. Hong, S.J. Hong et al.: IEEE/IEDM Vol. 27. 4 (1997), p.1.

5. J. Damiano C.K. Subramanian, M. Gibson et al.: IEEE/Symp. on VLSI Tech. Vol. 21. 4, p.212.

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3. Mechanical Stress and Defect Formation in Device-Processing: Validity of the Numerical Models for Mechanical Stress Calculation;IEEE Transactions on Electron Devices;2007-05

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5. High resolution thermoreflectance imaging on transistor arrays with defect-induced leakage;Journal de Physique IV (Proceedings);2005-06

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