High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

Abstract

SiC single crystal ingots grown by sublimation physical vapor transport (PVT) technique were prepared and then the SiC crystal quality with varying crucible design employing a guide tube and tantalum foil was systematically investigated. The growth rate of 2-inch SiC crystal grown by these crucible designs was about 0.3 mm/hr. The n-type and p-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated. The doping concentration level of below ~1017/cm3 was extracted from the absorption spectrum and Hall measurement. The densities of micropipes and inclusions in SiC crystal boules grown using the graphite/Ta foil double layer guide tube were significantly decreased. Finally we improved crystal quality through the introduction of new crucible design.