Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide
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Published:2006-10
Issue:
Volume:527-529
Page:717-720
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Chanda Sashi Kumar1,
Koshka Yaroslav1,
Yoganathan Murugesu2
Affiliation:
1. Mississippi State University
2. II-VI Incorporated Wide Bandgap Materials Group
Abstract
A room temperature PL mapping technique was applied to establish the origin of
resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native
defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped
samples with low vanadium content, the resistivity showed a good correlation with the total PL
signal consisting of contributions from both vanadium and native point defects. Well-known UD1
and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed
between these low-temperature PL signatures and the resistivity distribution.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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