CVD of 6H-SiC on Non-Basal Quasi Polar Faces

Abstract

Crystal growth of 6H-SiC in two non-basal directions is reported. The two explored surfaces are the {1-103} plane, named qC-face, and the {1-10-3} plane, named qSi-face. The asgrown bulk surfaces exhibit a smooth structure with a small ridging effect originating from the miscut of the seed crystals. Layers, epitaxially grown on the chemically-mechanically polished qCface, nicely replicate the original crystal structure and show no sign of polytype mixing. Lowtemperature photoluminescence measurements collected on the epilayers exhibit near bandedge spectral characteristics indicative of good quality 6H-SiC.