Abstract
Prepared were p-type Bi2Te3-based thermoelectric semiconductors, having a
grain-refined microstructure and a preferred orientation of anisotropic crystallographic structure.
Disks with a nominal composition Bi0.5Sb1.5Te3.0 were cut from an ingot grown by the vertical
Bridgman method (VBM) and deformed at 473 K under a pressure of 6.0 GPa by high pressure
torsion (HPT). The crystal orientation was characterized with X-ray diffraction. The
microstructures were characterized by using optical microscopy and scanning electron
microscopy. It was found that the HPT disks had a fine and preferentially oriented grain compared
to that of the VBM disks. Further, the power factor of the HPT disks was about twice as large as
that of the VBM disks. These results indicate that HPT is effective for improving the
thermoelectric properties of Bi2Te3-based thermoelectric semiconductors.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
13 articles.
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