Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC-Reference-Cited by-同舟云学术

Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC

Published:2006-10 Issue: Volume:527-529 Page:585-588
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Yan Fei¹,Devaty Robert P.¹,Choyke Wolfgang J.¹,Gali Adam²,Bhat I.³,Larkin David J.⁴

Affiliation:

1. University of Pittsburgh

2. Hungarian Academy of Sciences

3. Rensselaer Polytechnic Institute

4. NASA Glenn Research Center

Abstract

New lines are observed in the photoluminescence of 6H and 4H SiC epitaxial layers grown in cold wall CVD reactors and doped with phosphorus. These lines are associated with neutral phosphorus donor four particle bound exciton complexes with the phosphorus substituting on both the carbon and silicon sublattices. Assignments are made for the (h) hexagonal and (k) cubic sites of the phosphorus donor substituting on the two SiC sublattices.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.527-529.585.pdf

Reference6 articles.

1. S.G. Sridhara, L.L. Clemen, D.G. Nizhner, R.P. Devaty, W.J. Choyke and D.J. Larkin: Mater. Sci. Forum Vols. 264-268 (1998) pp.465-468.

2. R.P. Devaty, W.J. Choyke, S.G. Sridhara, L.L. Clemen, D.G. Nizhner, D.J. Larkin, T. Troffer, G. Pensl, T. Kimoto and H.S. Kong: Mater. Sci. Forum Vols. 264-268 (1998) pp.455-460.

3. Anne Henry and Erik Janzén: Mater. Sci. Forum Vols. 483-485 (2005) pp.101-104.

4. T. Hornos, A. Gali, R.P. Devaty and W.J. Choyke, these Proceedings.

5. D.J. Larkin: Physica Status Solidi B, Vol 202 (1997), pp.305-320.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EPR and ENDOR Studies of Shallow Donors in SiC;Applied Magnetic Resonance;2010-05-26

2. Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC;Materials Science Forum;2009-03

3. Defects in SiC;Defects in Microelectronic Materials and Devices;2008-11-19

4. Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC;Materials Science Forum;2008-09