Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
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Published:2006-10
Issue:
Volume:527-529
Page:1441-1444
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Ivanov Pavel A.1,
Levinshtein Michael E.1,
Agarwal Anant K.2,
Krishnaswami Sumi3,
Palmour John W.4
Affiliation:
1. Russian Academy of Sciences
2. Cree, Inc.
3. Cree Research, Inc.
4. Cree, Incorporation
Abstract
For 1-kV, 30-A 4H-SiC epitaxial emitter npn bipolar junction transistors, the dependence
of the common-emitter current gain β on the collector current IC were measured at elevated
temperatures. The collector-emitter voltage was fixed (at 100 V voltage) to provide an active
operation mode at all collector currents varying in a wide range from 150 mA to 40 A (current
densities 24 - 6350 A/cm2). The maximum room temperature current gain was measured to be βmax
= 40 (IC = 7 A) while βmax = 32 (IC = 10 A) at 250oC. The β-IC dependences were simulated using a
model which takes into account the main processes affecting the current gain. Minority carrier
lifetimes and surface recombination velocity were obtained by means of those considerations.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science