Method to Design and Fabricate a Novel RF MEMS Switch

Abstract

This paper presents a RF MEMS shunt switch with design, fabrication and measurement. The designed switch that avoids unstable and collapse could be used to RF MEMS devices. The photoresist is used as sacrifice layer and switch material is Aluminum. To make the surface of MEMS switch smooth, the method of multiple spreading thick photoresist and dry etching is proposed. A size of 130×230 (μm)2 MEMS switch with 1 μm height and 0.45 μm unevenness is demonstrated in a configuration. Continuous tuning of 1 μm is achieved by loading 33 volt DC voltage between MEMS switch beam and signal line. The RF performance shows 0.1-0.4dB insertion loss and 18-30 dB return loss of the switch. The fabrication, design, and measurement results of the MEMS switch are detailed.