Optimization of Chemical Mechanical Planarization Process of High Enrichment Slurry Under Low Pressure

Abstract

The polishing process was optimized according to the polishing rate and its consistency of HE slurry with different dilution multiple on the copper wafers, it can be confirmed that: the best pressure value of HE1, HE10, HE20, HE50 type slurries was 6890Pa, the best flow rate value of the preceding three slurries was 300ml/min, the best value of the HE50 slurry was 400ml/min. Through the planarization effects of the slurries with different dilution multiple, it can be obtained that: the initial dishing and erosion heights of the samples were both 1270nm and -500nm, and the two values respectively changed to 539.3nm, -75.7nm and 796.3nm, -191.3nm after being treated by HE1 and HE10 slurries, the step height of the wafer changed from 117nm to 72nm after being treated by HE20 slurry, the step height of the wafer changed from 88nm to 71nm after being treated by HE50 slurry. It was concluded that: the HE slurry shows strong ability for step removal when the slurry is diluted by 1 times and 10 times, the HE slurry also owns high planarization ability when the slurry is diluted by 20 times and 50 times.