Ferroelectric Properties of Bismuth Titanate Ceramics by Tb2O3/V2O5 Substitution

Abstract

The ferroelectricity of Bi3.2Tb0.8Ti3O12 (BTT) and Bi3.2Tb0.8Ti2.97V0.03O12 (BTTV) ceramics prepared at 1100°C by a conventional ceramic technique was investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (Pr) and coercive field (Ec) of the BTT ceramics are 16 μC/cm2 and 75kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BTT ceramics up to 26 μC/cm2, which is much larger than that of the BTT ceramics. Therefore, co-sustitution of Tb and V in Bi4Ti3O12 (BIT) ceramic is effective for the improvement of its ferroelectricity.