Affiliation:
1. China University of Petroleum
2. University of Electronic Science and Technology
Abstract
(001)-oriented LiNbO3(LN) ferroelectric films were grown on (100)-oriented n-type Si substrates using 15 nm-thick ZnO layers as buffers by pulse laser deposition technique and the LN/ZnO/n-Si heterojunctions were fabricated. Obvious photoswitching characteristics to white light were observed when the reverse voltages were applied on the LN/ZnO/n-Si heterojunction. High performance was exhibited, such as a largeON/OFFratio, short photoresponse time, steadyONorOFFstates, and well reversible. The results were discussed in terms of the band diagrams of the LN/ZnO/Si heterojunctions in this work.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science