The Experiment Research of Gas-Assisted Ion Etching Nanograting

Abstract

By using scanning electron microscope and focused ion beam (SEM-FIB) dual beam system which was self-assembled, with xenon diflouride, nanograting structure has been successfully processed on the gilded silicon wafer. The grating period is 950 nm, and the width of single etched groove is 652 nm. Gas-assisted ion etching is also known as focused ion beam assisted etching (FIBAE). The working principle of FIBAE was analyzed firstly. The different experimental results of nanograting structures which were fabricated by FIBAE and FIB alone were investigated. And the effect of exposure time on nanograting structures was also studied detailed in the FIBAE process. The Results showed that FIBAE has the technology advantage of high reaction rate, saving time, reducing costs, and deep etching, and it provides an effective method for processing nanograting of high depth in the future.