Study of Characteristics of HEMT-Transistors Based on AlGaN/GaN Heterostructure-Reference-Cited by-同舟云学术

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Study of Characteristics of HEMT-Transistors Based on AlGaN/GaN Heterostructure

Published:2020-02 Issue: Volume:28 Page:149-154
ISSN:2297-3400
Container-title:Nano Hybrids and Composites
language:
Short-container-title:NHC

Author:

Zhelannov Andrei V.¹,Seleznev Boris I.²,Fedorov Dmitry G.¹

Affiliation:

1. JSC «ОCB - Planet»

2. Yaroslav-the-Wise Novgorod State University

Abstract

The paper presents the route of manufacturing transistors on gallium nitride. As a result of the work done, prototypes of transistor crystals with a gate length and width of 0.5 μm and 0.8 mm, respectively. The basic static characteristics are presented.

Publisher

Trans Tech Publications, Ltd.

Subject

General Chemical Engineering

Link

https://www.scientific.net/NHC.28.149.pdf

Reference5 articles.

1. Yu.V. Fedorov, Electronics: STB 2 (2011) 92–107.

2. S.B. Aleksandrov, Semiconductors 10 (2004) 1275–1279.

3. A. Turkin, Components & Technologies 5 (2011) 6–10.

4. A.V. Zhelannov, A.S. Ionov, A.V. Petrov, B.I. Seleznev, Nano- and microsystem technology 19 (2017) 399.

5. V. Desmaris, J. Eriksson, Electrochemical and Solid-State letters 7(4) (2004), G72-74.

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