Characterization of TiO2 Thin Films Deposited by SILAR Method

Abstract

SILAR method is adopted for the deposition of titanium dioxide (TiO2) thin films. Titanium trichloride and ammonium hydroxide are used as the cationic and anionic precursors respectively. Deposition parameters such as growth rate, individual dipping and rinsing times and precursor concentration are optimized to obtain uniform, adherent films. As-deposited TiO2films are annealed at 300°C and 400° C. The crystallization behaviour of TiO2thin films is analysed by X-ray diffraction. Optical constants of the films are evaluated using UV-Vis spectrophotometry. Effect of deposition parameters on the optical properties of the films is analysed.The direct and indirect band gap values of the TiO2thin films is in the range of 3.4-3.8 eV and 2.1-3.8 eV respectively.