A Hot-Carrier Damaged Indicator of MOSFETs by the Low Frequency Noise Measurement Technique

Abstract

In fact, the 1/f noise spectrum is correlated with the interface trap density of a MOSFET gate oxide, and the trap density generation in gate oxide is strong dependently on the hot-carrier injection. In this paper, we will investigate this phenomenon and compare with the threshold voltage shifted measured by the static I-V analysis. Eventually, it is found that the technique of the low frequency 1/f noise spectrum is an accurate and sensitive tool to detect the hot-carrier damage.