Affiliation:
1. University of Tizi-Ouzou
2. Université of Aix Marseille
Abstract
Tin oxide SnO2 thin films are deposited by atmospheric pressure chemical vapor deposition APCVD technique. The electrical properties of the deposited films and the influence of the temperature ranging from room temperature to 500°C are analyzed by Hall measurement technique. The negative value of the hall constant indicates that the obtained tin oxide thin films are an N type semiconductor. The value of the mobility and the carrier concentration are 21 cm²/ V. sec and 1,50. 1020 cm-3 respectively. These films present an optical reflectance less than 20%.The change of the surface morphology due to the heat treatment is characterized by the scanning electronic microscopy SEM and the transmission electronic microscopy TEM. The films have a polycrystalline aspect. A post annealing at 500°C improves their morphology.
Publisher
Trans Tech Publications, Ltd.