Affiliation:
1. National United University
Abstract
A non-Maxwellian hot-carrier generation current model for simulation of charge injection and erasing in the 0.35um flash EEPROM device is presented in this paper. Unlike the conventional model, which is based on the local electric fields in the device, and it accounts for non-local effects resulting from the large variations in electric field in a submicron flash EEPROM. Good agreements between the measured and calculated results in the charge writing and the Fower-Nordheim erasing operations.
Publisher
Trans Tech Publications, Ltd.
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