Research on the Electro-Exploding Mechanism of Semiconductor Bridge

Abstract

In an effort to elucidate the electro-exploding mechanism of semiconductor bridge (SCB), constant current was forced to flow through polysilicon bridge with a resistance about 1 Ω, while the response of voltage and current was measured to obtain its electro-exploding performances. The rise platform and subsequent peak in the current-time curve were observed. It is inferred from the optical signal that the first peak in the current curve results from the plasma generation of the bridge material. The entire electro-exploding process includes Joule heating, melting, vaporizing and plasma generating stage. The laws between performance parameters and the size or shape of bridge area were analyzed; it demonstrated that V-type angles on both ends of bridge were helpful for function time reducing, which provided an experimental basis for SCB design.