Affiliation:
1. Nanjing University of Science and Technology
2. Science and Technology on Low-Light-Level Night Vision Laboratory
Abstract
To explore the optic properties of transmission-mode GaAs photocathode module, experimental and theoretical values of reflectance and transmittance of photocathode module has been compared. it showns that experemental curves cannot tally with theoretical curves completely. The variation range of initial values of thickness is firstly setted. Modifing transmittance formula by a fitting coefficient A, optical properties is fitted using the method of error control. R-T combined error reduced from 15.2% to 4.9% using R-T combined error control scheme. Optimal fitting values of thickness of photocathode module are obtained, which are d1= 110 nm, d2= 1019 nm, d3= 1491 nm. And the error of total thickness is 2.9%.
Publisher
Trans Tech Publications, Ltd.
Reference11 articles.
1. D. A. Orlov, M. Hoppe, Energy distributions of electrons emitted from GaAs(Cs, O), Appl. Phys. Lett. 78(18) (2001) 2721~2723.
2. Du Xiaoqing, Chang Benkang, Measurement and analysis of response characteristic of transmission-mode GaAs photocathode before and after indium seal, Acta Optica Sinica, 26(4) (2006) 538~540 (in Chinese).
3. Y. Sun, R. E. Kirby, The surface activation layer of GaAs negative electron affinity photocathode activated by Cs, Li, and NF3, Appl. Phys. Lett. 95 (17) (2009) 174109-1~3.
4. Ö. Faruk Farsakoğlu, D. Mehmet Zengin, Determination of some main parameters for quantum values of GaAlAs/GaAs transmission-mode photocathodes in near-ir region, Opt. Eng. 32 (5) (1993) 1105~1113.
5. Zou Ji-Jun, Chang Ben-Kang, Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes, Acta Physica Sinac. 56 (5) (2007) 2992~2997 (in Chinese).