Affiliation:
1. Huafan University
2. National Nano Device Laboratories
3. Minghsin University of Science and Technology
4. Chung Hua University
Abstract
In this paper, we used the electron beam (e-beam) evaporation to deposit Ge thin film on glass, and used microwave annealing (MWA) system of 5.8 GHz frequency for thin film crystallization. Then, we compared the MWA experiment results of sample sheet resistance (Rs), crystallization strength and cross section with those using traditional rapid thermal annealing (RTA) equipment. We found that MWA can get poly-Ge thin film with (111), (220) and (311) crystallization directions and optimal Rs at a temperature of about 450 ° C without affecting the film thickness. By comparison, RTA equipment can only reduce the sample Rs at least temperature of 550oC.
Publisher
Trans Tech Publications, Ltd.
Reference7 articles.
1. Chao-Yang Tsao , Ju rgen W. Weber, Patrick Campbell, Per I. Widenborg, Dengyuan Song, Martin A. Green, Applied Surface Science, 255 (2009) , 7028–7035.
2. Yao-Jen Lee, Shang-Shiun Chuang, Fu-Kuo Hsueh, Ho-Ming Lin, Shich-Chuang Wu, Ching-Yi Wu, and Tseung-Yuen Tseng, IEEE Electron Device Letters, 32 (2011), 194-196.
3. J.L. Xie, C. C. James Toh, W.H. Li Catherine, Deng Wei, IEEE 13th Electronics Packaging Technology Conference (2011), 834-836.
4. A.A. Akl, H. Howari, Journal of Physics and Chemistry of Solids, 70 (2009) , 1337–1343.
5. N. Srinivasa Rao, A.P. Pathak, G. Devaraju, V. Saikiran, Vacuum, 85 (2011) , 927-931.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献