Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching-Reference-Cited by-同舟云学术

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

Published:2019-09 Issue: Volume:822 Page:594-600
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Endiiarova E.V.¹,Ruby Singh²

Affiliation:

1. Peter the Great St.Petersburg Polytechnic University

2. Karlsruhe Institute of Technology

Abstract

. The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1 [20; 1000] pF, С2 [4; 100] pF, and inductor with inductance 2,5 μH.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.822.594.pdf

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