Registration of an ICP Plasma CV Dependences under Various Pressures in the Plasma-Chemical Deep Etching System-Reference-Cited by-同舟云学术

Registration of an ICP Plasma CV Dependences under Various Pressures in the Plasma-Chemical Deep Etching System

Published:2019-09 Issue: Volume:822 Page:587-593
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Iankevich Gleb A.¹^ORCID

Affiliation:

1. Karlsruhe Institute of Technology

Abstract

The Langmuir probe plasma parameters diagnostics method was studied based on the ICP plasma chemical processing system. Single Langmuir probe with high-frequency compensation system and the special electrical circuit was designed and constructed. CV dependences in various working pressures were registered.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.822.587.pdf

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