Enlargement of SiC Crystals: Defect Formation at the Interfaces-Reference-Cited by-同舟云学术

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Enlargement of SiC Crystals: Defect Formation at the Interfaces

Published:1998-02 Issue: Volume:264-268 Page:45-48
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Anikin Mikhail¹,Pons Michel²,Chourou K.³,Chaix-Pluchery O.¹,Bluet Jean Marie⁴,Lauer V.⁴,Pons R.¹

Affiliation:

1. Domaine Universitaire

2. Grenoble INP–CNRS-UJF

3. INPG-ENSPG

4. INSA de Lyon - Domaine Scientifique de la Doua

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.264-268.45.pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polyimide-derived graphite barrier layer adhered to seed crystals to improve the quality of grown silicon carbide;RSC Advances;2022

2. Synthesis and Growth of 6H-SiC and 3C-SiC in an Al–Si–C System at 820 °C: Effect of the Reaction Path on the SiC Polytype;Crystal Growth & Design;2020-01-07

3. Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method;Materials Science Forum;2011-03

4. Quality Aspects for the Production of SiC Bulk Crystals;Materials Science Forum;2007-09

5. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties;Physics Reports;2003-05

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