Spatial Distribution of Vacancy Defects in GaAs:Te Wafers Studied by Positron Annihilation-Reference-Cited by-同舟云学术

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Spatial Distribution of Vacancy Defects in GaAs:Te Wafers Studied by Positron Annihilation

Published:1997-09 Issue: Volume:255-257 Page:614-616
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Cavallini Anna¹,Dupasquier A.²,Ferro Gabriel³,Piqueras J.⁴,Valli M.

Affiliation:

1. Università di Bologna

2. Politecnico di Milano

3. Université de Lyon

4. Universidad Complutense

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.255-257.614.pdf

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