Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures-Reference-Cited by-同舟云学术

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Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures

Published:1997-12 Issue: Volume:258-263 Page:575-580
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Emtsev Valentin V.¹,Dedek U.,Ehrhart Peter²,Kervalishvili P.D.,Margaryan M.A.,Poloskin D.S.¹,Zillgen Holger

Affiliation:

1. Russian Academy of Sciences

2. Forschungszentrum Jülich GmbH (IWV 2)

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.258-263.575.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation-Resistant Solar Cells: Recent Updates and Future Prospective;Handbook of Ecomaterials;2019

2. Development of nanosensors in nuclear technology;AIP Conference Proceedings;2017

3. Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures;Physica B: Condensed Matter;2006-04

4. Electron irradiation of heavily doped silicon: group-III impurity ion pairs;Physica B: Condensed Matter;1999-12

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