Growth of Double-Side Tl-2212 Thin Film on CeO2-Buffered MgO Substrate

Abstract

The double-side Tl-2212 films were fabricated on CeO2-buffered MgO substrates by dc magnetron sputtering and post-annealing method. The RF magnetron sputtering technology was used to grow CeO2buffer layers. XRD and SEM measurements showed that the CeO2films on annealed MgO substrates were highly c-axis orientation, and the Tl-2212 superconducting films on both sides had similar morphology and crystalline structure. For both sides of Tl-2212 films, the critical transition temperatures (Tc) were above 106 K, and the critical current densities (Jc) were above 2.2 MA/cm2(77 K, 0 T).