Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes-Reference-Cited by-同舟云学术

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Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes

Published:2014-12 Issue: Volume:1082 Page:30-33
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Wang Bin¹,Cao Qian Tao¹,Song Zhen Guo¹

Affiliation:

1. Science and Technology on Electronic Test and Measurement Laboratory

Abstract

Technologies of TaN thin-film resistors were studied, the thin films were prepared by the D.C. sputtering system, and the trimming methods of the resistor were anodic oxidation and autoxidation. We laid emphasis on the study of power capability of TaN thin film resistor in this paper. We acquired the resistors with the average power capability of 13W/mm2.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.1082.30.pdf

Reference7 articles.

1. WANG Xiuyu, Thin Film Chip Resistors with High Resistance and Low Temperature Coefficient of Resistance, Trans Tianjin Univ. 16 (2010)348.

2. GAO Liang, Research Status and Application of Tantalum Nitride Thin Film by Deposition, Materials Review. 24 (2010) 20-25.

3. Y.M. Lu, Electrical properties of TaxNy films by implementing OES in the sputtering system. Materials Chemistry and Physics. 72 (2001)278–280.

4. BAI Ya-xu YUAN Zheng-xi HE Wei HE Bo MO Yun-qi, Control of electrical resistivity of TaN thin films by reactive sputtering for embedded passive resistors, Integrated PCB. 12 (2010)55-58.

5. CHUAI Rong-yan, MENG LI-nan, WEI Chun-cai, Research on prevention of crystallization to tantalum anode oxide film, Journal of Shengyang University of Technology. 26 (2004) 433-452.

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