In Situ TEM Manipulation and Property Study of Cd2Ge2O3 Nanowires

Abstract

Cd2Ge2O6 nanowires have been synthesized via a simple and facile hydrothermal route using GeO2 and CdO as the source materials with the surfactant. The structure and morphology of the Cd2Ge2O6 nanowires were fully analyzed by field emission scanning electron microscope (FESEM) and HRTEM. With a focused electron beam irradiation, the Cd2Ge2O6 nanowire became unstable and tended to heavily destroyed under a long time irradiation. Using the TEM-STM holder, electrical properties of an individual Cd2Ge2O6 nanowire has been measured and the obtained I-V curve demonstrated the semiconductor property.