Electrical Properties of Carbon-Based Thin Film on Al2O3/Si

Abstract

The electrical properties of Metal Insulator Semiconductor (MIS) structure comprise of carbon-based thin film grown on γ-Al2O3/Si have been studied. The carbon based thin film is deposited by using DC unbalanced magnetron sputtering using Fe doped carbon pellet as a target. Electrical properties of this structure have been analyzed through I-V characteristics measurements using cross-sectional electrode configurations. In-plane I-V measurement confirms the electrical conductivity of carbon layer is higher than Al2O3. The role of carbon thin film has been investigated by comparing the I-V characteristic of MIS structure with and without carbon thin film. Carbon layer and interface states of carbon/γ-Al2O3 have a significant contribution to enhance the cross-sectional current density. A simple energy band diagram model and theoretical calculation have been developed to further analyze this I-V characteristics data. This study is expected to be an alternative way to support the realization of future carbon-based electronic devices.