Influence of Deposition Substrate Temperature on Optical and Electrical Properties of In Situ Boron Doped Amorphous Carbon Film for Solar Cell Applications

Abstract

The effect of deposition subtrate temperatures by the applied of constant -20 V on electrical and optical properties of in-situ boron-doped amorphous carbon films were determined. From Tauc’s plot, optical band gap (𝐸𝑔) was determined, and 𝐸𝑔 decreased as deposition temperature increased (1.99 eV to 1.90 eV) while the resistivity values were slowly deteriorates from 1.84x106 Ωcm to 4.31x105 Ωcm. The highest and lowest efficiecny of Au/a-C:B/n-Si/Au devices were achieved at 350°C (0.063641 %) and 200°C (0.042691 %), respectively. It can be concluded that by comparing with deposition temperature ranging from 200°C to 350°C under deposition condition used, at 350°C showed the optimum value for solar cell applications.