Characterizations of Indium-Doped Cu2SnSe3 Bulks Made by Reactive Sintering at 550 °C

Abstract

Indium-doped Cu2SnSe3bulk materials with the Cu2(Sn1-xInx)Se3(In-x-CTSe) formula atx= 0, 0.05, 0.1, 0.15, and 0.2 were prepared at 550 °C for 2 h with soluble sintering aids of Sb2S3and Te. Defect chemistry was studied by measuring structural and electrical properties of In-x-Cu2SnSe3as a function of dopant concentration. In-x-CTSe pellets showp-type atx= 0, 0.05 and 0.1 andn-type atx= 0.15 and 0.2. The low hole concentration of 4.56×1017cm-3and high mobility of 410 cm2V-1s-1were obtained for Cu2(Sn1-xInx)Se3bulks atx= 0.1 (10% In). The explanation based upon the In-to-Cu antisite defect for the changes in electrical property was declared.