A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region-Reference-Cited by-同舟云学术

A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region

Published:2015-04 Issue: Volume:1096 Page:514-519
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Hu Yue¹,Wang Hao¹,Wang De Wen²,Du Cai Xia¹,Ma Miao Miao¹,Yang Jin¹,He Jin¹

Affiliation:

1. Peking University Shenzhen SOC Key Laboratory

2. SHENZHEN SI Semiconductors CO., Ltd

Abstract

A 600V-class lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with step-doped drift region (SDD) in partial silicon-on-insulator (PSOI) is introduced to improve breakdown voltage (BV) and reduce on-resistance (Ron). The step-doped method induces an electric field peak in the surface of the device, which can reduce the surface field in the device and adjust the doping accommodation in the drift region. The adjusted drift region can allow higher doping concentration under the drain end which results in higher breakdown voltage, and accommodate more impurity atoms as a whole which provides more electrons to support higher current and thus reduce on-resistance.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.1096.514.pdf

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