Infuence of Nitrogen Gas Flow Rate on Nitrogenated Amorphous Carbon Film for Solar Cell Applications

Abstract

In this paper, the effect of nitrogen gas flow rate on electrical and electronic properties of nitrogen doped amorphous carbon film (a-C:N) by the use of constant +50 V is presented. The flow-rate of nitrogen gas into the furnace was influenced the resistivity as well as conductivity a-C:N film. The resistivity and conductivity of a-C:N films deposited at high nitrogen flow-rate (200 mL/min) produced low resistivity and high conductivity under deposition condition used. The highest resistivity (4.97x107 Ω.cm) and lowest resistivity (2.81x101 Ω.cm) is found at 0 mL/min (undoped) and 200 mL/min. The fabricated solar cell device with the configuration of Au/n-C:N/p-Si/Au for undoped (0 mL/min) and nitrogen doped (200 mL/min) achieved efficiency (𝜂) 0.00111% and 0.00120 %, respectively.