Affiliation:
1. Universiti Teknologi Malaysia
Abstract
Carbon doped aluminum oxide co-doped with magnesium (Al2O3:C:Mg) thin films were deposited using radio frequency magnetron sputtering method on Si (100) substrates. The deposition chamber temperature was manipulated to allow control over the crystalline phase. The crystalline phase of deposited thin films were determined by x-ray diffraction (XRD) technique. Slight change in crystallite size was observed with respect to the increasing deposition chamber temperature. Fourier transform infrared (FTIR) analyses indicated a negligible interfacial SiO2 growth during deposition. Transmission spectra of FTIR showed the bond and functional group of deposited thin films.
Publisher
Trans Tech Publications, Ltd.
Reference17 articles.
1. K. Kari, H. Jorma, J. Pierre, Properties of aluminium oxide thin films deposited by reactive magnetron sputtering, Thin. Sol. Films. 339 (1999) 240-248.
2. W. Erik, Alumina Thin Films from Computer Calculation to Cutting Tools, Dissertation No. 1221, Linkoping studies in Science and Technology, (2008).
3. K. Rajesh, I. Ronald, J. Gregory, S. Axel, T. Christos, ALD and Characterization of Aluminum Oxide Deposited on Si(100) using Tris(diethylamino) Aluminum and Water Vapor, J. Electrochem. Soc. 153 (2006) 701-706.
4. X. Multone, High Vacuum Chemical Vapor Deposition (HV-CVD) of Alumina Thin Films, Phd Thesis of Material Science Program, Ecole Polytechnique Fédérale de Lausanne (EPFL), (2009).
5. A. Boumaza, L. Favaro, J. Ledion, G. Sattonay, J.B. Brubach, P. Berthet, A.M. Huntz, P. Roy, R. Tetot, Transition alumina phases induced by heat treatment of boehmite: An x-ray diffraction and infrared spectroscopy study, J. Sol. State Chem. 182 (2009).