Enhancement of Resistivity of CdZnTe Crystal by Laser Radiation-Reference-Cited by-同舟云学术

Enhancement of Resistivity of CdZnTe Crystal by Laser Radiation

Published:2015-07 Issue: Volume:1117 Page:19-22
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Medvid Artur¹,Mychko Aleksandr¹,Dauksta Edvins¹

Affiliation:

1. Riga Technical University

Abstract

The enhancement of CdZnTe crystal resistivity by λ=1064nm Nd:YAG laser radiation was shown. This effect is explained by compensation of cadmium vacancy (VCd) by indium atoms due to a laser-induced temperature gradient around Te inclusions. The temperature gradient is caused by the selective absorption of the laser radiation by the Te inclusions.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.1117.19.pdf

Reference16 articles.

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