The Study of GaAsP/GaP Photodiode for Yellow Light Detection-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The Study of GaAsP/GaP Photodiode for Yellow Light Detection

Published:2014-10 Issue: Volume:1033-1034 Page:1120-1122
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Xiao Xue Fang¹,Lei Guo Wei²,Chen Chao³

Affiliation:

1. Xiamen University of Technology

2. Jimei University

3. Xiamen University

Abstract

A novel photodiode was fabricated for detecting the weak emission light of infrared up-conversion material. This GaAsP/GaP photodiode has a PIN structure, with the spectral response range is 500nm to 650nm, and the peak sensitivity wavelength is 555nm. The dark current is below 4nA at a bias of-5V. The response characteristics is 0.12μA/μW at a bias of-5V.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.1033-1034.1120.pdf

Reference9 articles.

1. F.E. Auzal. Proc. IEEE, 61 (1973), p.758–786.

2. S.C. Chen, F.M. Dai. Acta Optica Sinica (Chinese), (1995), p.1663–1668.

3. H.U. Gudel, M. Pollnau. J. Alloys and Compounds, (2000), pp.303-304.

4. R. Balda, L.M. Lacha, A. Mendioroz, et al. J. Alloys and Compounds, (2001), 323-324.

5. X.F. WANG. Laser & Infrared(Chinese), 33(2003), pp.281-282.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical study of Intersubband Absorption Coefficient of Conduction Band in GaAsP/GaP Quantum Well Structures;2019 International Conference on Power Generation Systems and Renewable Energy Technologies (PGSRET);2019-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP